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| SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Gain of 400 at IC=2 Amps and low saturation voltage * Extremely low equivalent on-resistance; RCE(sat) 92m at 3A APPLICATIONS * Darlington replacement * Flash gun convertors and Battery powered circuits PARTMARKING DETAIL FZT689B COMPLEMENTARY TYPE FZT789B FZT689B C E C B VALUE 20 20 5 8 3 2 -55 to +150 UNIT V V V A A W C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Breakdown Voltage Collector-Base Collector-Emitter Emitter-Base Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. 20 20 5 0.1 0.1 0.10 0.50 0.45 0.9 0.9 500 400 150 150 200 16 30 800 MHz pF pF ns ns TYP. ELECTRICAL CHARACTERISTICS (at Tamb = 25C) MAX. UNIT CONDITIONS. V V V A A IC=100A IC=10mA* IE=100A VCB=16V VEB=4V IC=0.1A, IB=0.5mA* IC=2A, IB=10mA* IC=3A, IB=20mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=0.1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA,IB1=50mA IB2=50mA, VCC=10V V V V V V Base-EmitterSaturationVoltage VBE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(on) hFE fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 219 FZT689B TYPICAL CHARACTERISTICS IC/IB=200 0.8 IC/IB=100 IC/IB=10 Tamb=25C 0.8 -55C +25C +100C +175C IC/IB=100 - (Volts) 0.6 - (Volts) V 0.6 0.4 0.4 V 0.2 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 +100C +25C -55C VCE=2V 1.5K 1.6 1.4 1.2 1.0 0.8 0.6 - Normalised Gain -55C +25C +100C +175C IC/IB=100 1K 500 - Typical Gain V h 0.4 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 h 0 I+ - Collector Current (Amps) - (Volts) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55C +25C +100C +175C 10 VCE=2V - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 1 DC 1s 100ms 10ms 1ms 100s 0.1 V 0 0.01 0.1 1 10 0.01 0.1 1 10 100 I+ - Collector Current (Amps) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 220 |
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